Fabrication of High Accurate Mirrors by Ion Beam Figuring
نویسندگان
چکیده
منابع مشابه
Fabrication of silicon microstructures using a high energy ion beam
We report an alternative technique which utilizes fast proton or helium ion irradiation prior to electrochemical etching for three-dimensional micro-fabrication in bulk p-type silicon. The ion-induced damage increases the resistivity of the irradiated regions and slows down porous silicon formation. A raised structure of the scanned area is left behind after removal of the un-irradiated regions...
متن کاملFabrication of GaN nanorods by focused ion beam
Text IIINitride nanocolumns (III-N NCs) are the subject of intense research since the past decade because of their unique properties and potential electronic and optoelectronic applications. NCs are usually grown on Si(111), Si (100), SiC, and sapphire substrates by a self-assembly process using plasma-assisted molecular beam epitaxy [1-3]. Unlike continuous layers, NCs accommodate the lattice-...
متن کاملFabrication of carbon nanomembranes by helium ion beam lithography
The irradiation-induced cross-linking of aromatic self-assembled monolayers (SAMs) is a universal method for the fabrication of ultrathin carbon nanomembranes (CNMs). Here we demonstrate the cross-linking of aromatic SAMs due to exposure to helium ions. The distinction of cross-linked from non-cross-linked regions in the SAM was facilitated by transferring the irradiated SAM to a new substrate,...
متن کاملSimulation of Fabrication toward High Quality Thin Films for Robotic Applications by Ionized Cluster Beam Deposition
The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...
متن کاملFabrication of high-density nanostructures by electron beam lithography*
We demonstrate a fabrication method to define high-density, uniform nanostructures by electron beam lithography at conventional beam voltages ~,40 kV!. Here we optimize the exposure and development conditions needed to generate such nanostructure arrays using polymethylmethacrylate as positive resist and isopropyl alcohol as a developer. Arrays of 12 nm dots with 25 nm period and 20 nm lines wi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 2018
ISSN: 0912-0289,1882-675X
DOI: 10.2493/jjspe.84.502